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GaN Page 3
Nidec and Renesas collaborate on E-Axle semiconductors
Nidec and Renesas collaborate on E-Axle semiconductors
Business news |
E-Axle proof of concept to launch at end of 2023 will feature a 6-in-1 system based on Is SiC, with…
IQE announces 200 mm RGB epitaxy for microLED display qualification
IQE announces 200 mm RGB epitaxy for microLED display qualification
Business news |
Differentiated microLED wafer products will provide its customers with faster-time-to-market options for display-level qualification.
QPT drives high-power GaN up to 20 MHz
QPT drives high-power GaN up to 20 MHz
Technology News |
Patented set of technologies unleashes high-power GaN to operate at up to 20 MHz for the first time without overheating…
4-kW GaN power supply reference design
4-kW GaN power supply reference design
New Products |
Customers can integrate the new turnkey GaN-based PSU reference design directly in their own products and are free to modify…

ROHM mass producing 650-V GaN HEMTs
ROHM mass producing 650-V GaN HEMTs
Business news |
GaN HEMTs boost efficiency and miniaturization in a wide range of power supply systems, including servers and AC adapters.
Ultra-fast control IC maximizes GaN device performance
Ultra-fast control IC maximizes GaN device performance
Technology News |
Greater energy savings and miniaturization in power supply applications by combining GaN devices and fast control ICs.
900 V GaN flyback switcher ICs for automotive/industrial use
900 V GaN flyback switcher ICs for automotive/industrial use
New Products |
GaN switcher ICs target industrial applications and 400-V-system automotive power supplies to 100 W with better than 93 percent efficiency.
Cost optimised power supply reference designs cut energy waste
Cost optimised power supply reference designs cut energy waste
New Products |
Power supply reference designs deliver an end-to-end flat efficiency of 90 percent from just 10 W and can also be optimised with GaN and SiC technology.
High-speed semiconductor device models compared
High-speed semiconductor device models compared
Technology News |
Researchers at the University of Illinois Urbana-Champaign in collaboration with Air Force Research Laboratory engineers have studied two semiconductor simulation tools using different energy-transport models for RF gallium nitride (GaN)…
Simulation framework predicts thermal transport in 5G/6G RF devices
Simulation framework predicts thermal transport in 5G/6G RF devices
Technology News |
The new tool will be very useful in guiding optimizations of next-gen RF devices toward thermally improved designs.
Programmable ZVS power-supply ICs in small form factor
Programmable ZVS power-supply ICs in small form factor
New Products |
InnoSwitch4-Pro family of ZVS flyback ICs enable over 95 percent efficient, compact, USB PD and Universal Fast Charging Specification adapters up to 220 W…
AI optimizes wide-bandgap power converter design
AI optimizes wide-bandgap power converter design
Technology News |
Researchers at Cardiff University and the Compound Semiconductor Applications (CSA) Catapult say they have created a new and more efficient way of modeling and designing wide-bandgap power electronic converters using…
Navitas Semiconductor and Avnet Silica collaborate on GaN power ICs
Navitas Semiconductor and Avnet Silica collaborate on GaN power ICs
Business news |
Cooperation will bring significant advantages to next-generation systems using power-efficient GaN technology across a spectrum of applications.
Innoscience extends its 650-V HEMT family
Innoscience extends its 650-V HEMT family
New Products |
HEMT family adds low on-resistance 190 mΩ, 350 mΩ and 600 mΩ devices in industry-standard cost-competitive packages.
GaN ICs and reference design shrink motor drives
GaN ICs and reference design shrink motor drives
New Products |
The GaN-based inverter reference design enhances motor drive system performance, range, precision, torque, all while simplifying design.
Miniature pulsed power system looks to disrupt energy, healthcare
Miniature pulsed power system looks to disrupt energy, healthcare
Technology News |
Researchers at the University of Houston say they are working to develop the next generation of miniaturized pulsed power systems.
Infineon expands existing backend operations in Indonesia
Infineon expands existing backend operations in Indonesia
Business news |
Part of Infineon's long-term investment strategy, the Batam site will increase its focus on the assembly and test of automotive products.
GaN has a significant opportunity within the 5G market
GaN has a significant opportunity within the 5G market
Market news |
Energy consumption of telecoms towers is set to increase dramatically and adoption of wide bandgap semiconductors like GaN is one way to reduce this future impact.
Ultrafast GaN device could protect electric grid from EMPs
Ultrafast GaN device could protect electric grid from EMPs
Technology News |
Scientists at Sandia National Laboratories say they have developed a tiny electronic device that can shunt excess electricity within a few billionths of a second while operating at a record-breaking…
Battle for the fastest phone charger
Battle for the fastest phone charger
Feature articles |
Phone makers are going head to head at Mobile World Congress this week over charging times. Realme is using gallium nitride power chips from Navitas to support charging to 50%…
Belgian wafer fab sold to GaN startup with China connections
Belgian wafer fab sold to GaN startup with China connections
Business news |
On Semiconductor’s silicon wafer fab at Oudenaarde, Belgium, has been sold to startup BelGaN Group BV (Mechelen, Belgium) for conversion to gallium nitride production for automotive and other power applications.
Infineon in €2bn silicon carbide move
Infineon in €2bn silicon carbide move
Business news |
Infineon converts Villach fab lines to SiC, expands Malaysian fab in €2bn move Infineon Technologies is spending over €2bn to expand its capacity for silicon carbide and gallium nitride power…
EPC. MPS team for 2kW 48V DC-DC converter design
EPC. MPS team for 2kW 48V DC-DC converter design
New Products |
EPC has worked with long-term partner Monolithic Power Solutions (MPS) on a high efficiency reference design for a 2kW bidirectional DC-DC converter using gallium nitride (GaN) devices. The…
Hirel GaN power and sensing for data centres
Hirel GaN power and sensing for data centres
Technology News |
Cambridge GaN Devices (CGD) has launched a project to develop and commercialise a highly efficient Gallium Nitride (GaN) chip technology for data centre server power supplies. The aim of the…


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