Infineon’s CoolSiC MOSFETs power chosen for Toyota’s bZ4X
Infineon says its silicon carbide power semiconductors have been selected for Toyota’s new bZ4X battery-electric vehicle. The company’s CoolSiC MOSFETs will be used inside the on-board charger (OBC) and the DC/DC converter.
For eeNews Europe readers, this is a useful data point on where SiC adoption is accelerating beyond traction inverters and into key vehicle power-conversion blocks. It also highlights how automakers are increasingly using wide-bandgap devices to target measurable EV benefits such as faster charging and extended driving range.
SiC moves deeper into Toyota’s EV power electronics
According to the release, Toyota has adopted Infineon’s CoolSiC MOSFETs specifically in the OBC and DC/DC converter of the bZ4X. These are critical subsystems that directly affect charging efficiency, thermal performance, and packaging density.
Infineon points to the inherent material advantages of silicon carbide — low losses, high thermal resistance, and high voltage capability — as the main reasons SiC can help improve system-level performance. In practical EV terms, the company says this supports both longer range and reduced charging time.
Infineon also framed the win as part of the broader transition toward electrified mobility, where power electronics is becoming a central differentiator for OEMs.
“We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility,” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. “With our dedication and our commitment to innovation and zero-defect quality, we are well positioned to meet the growing demand for power electronics in electromobility.”
Trench-gate CoolSiC targets efficiency and simpler drive circuits
Infineon says its CoolSiC MOSFETs use a trench gate structure designed to reduce normalized on-resistance and shrink chip size. According to the company, that combination helps cut both conduction and switching losses — a key lever for improving efficiency in automotive power conversion.
The release also highlights device-level optimizations aimed at supporting high-density, high-reliability designs in OBC and DC/DC applications. Infineon points to optimized parasitic capacitance and gate threshold voltage, enabling unipolar gate drive, which can simplify the gate driver circuitry in automotive power systems.
With the bZ4X design win, Infineon is positioning CoolSiC as a scalable SiC platform for the expanding number of electrified vehicle subsystems moving to wide-bandgap power devices.
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